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 JMnic
Product Specification
Silicon PNP Power Transistors
DESCRIPTION With TO-3PFa package Complement to type 2SD2064 High transition frequency Satisfactory linearity of hFE APPLICATIONS For high power amplification
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
2SB1371
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature 3 150 -55~150 ae ae Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -5 -6 -10 70 W UNIT V V V A A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-4A ;IB=-0.4A IC=-4A ; VCE=-5V VCB=-120V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IE=0 ; VCB=-10V;f=1.0MHz IC=-0.5A ; VCE=-5V;f=1.0MHz 20 60 20 150 15 MIN
2SB1371
SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE -2 hFE -3 COB fT
TYP.
MAX -2.0 -1.8 -50 -50
UNIT V V |I |I A A
200
pF MHz
hFE-2 classifications Q 60-120 S 80-160 P 100-200
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1371
Fig.2 Outline dimensions (unindicated tolerance:A
0.30mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB1371
4


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